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Structure, magnetic properties and SOT effect in the Bi0.9Sb0.1(10 nm)/Mn0.6Ga0.4(3 nm) bilayer with perfect PMA.

A colossal breakthrough for topological spintronics

As of not long ago, the search for appropriate spin Hall materials for cutting-edge SOT-MRAM devices has been looked with difficulty: First, overwhelming metals,...

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