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Atomic structure of an unstrained 3.1 nm [110] SiNW and corresponding electronic (band) structure. (a) Front view and side view of a 3.1 nm [110] SiNW under no strain. Five unit cells of SiNW are shown in the side view highlighting the canted SiH2 (silicon dihydride) units. (b) Graphical representation of finding secondary states for an electron in sub band 1 (B1) which scatters to sub band 3 (B3) assisted by LA phonons. Ideally the secondary states in B3 (shadowed strip) form a quasi-continuum. In simulation, this is limited by the resolution of discretizing the BZ along kz. (c) The same graphical example for scattering from B1 to all sub bands (B1, B2, B3 and B4) assisted by LO phonons. Here there is a limited number of secondary states with corresponding rates arranged in a table. (d) Band structure of the unstrained nanowire showing a direct bandgap value of Eg = 1.554 eV and an energy offset of ΔE = 131 meV. The first four conduction sub bands (numbered as S1, S2, S3 and S4) are selected to calculate all electron-phonon scattering events required by EMC simulation.

Silicon breakthrough could make key microwave technology much cheaper and better

High-frequency microwaves convey motions in an extensive variety of gadgets, including the radar units police use to get speeders and crash shirking frameworks in...

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